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The first successful operation of InGaAs strained layer quantum well (SL-QW) injection lasers at approximately 2 mu m is reported. The threshold current density and the external differential quantum efficiency of 5 mu m wide and 800 mu m long ridge waveguide lasers were 2.5kA/cm/sup 2/ and 6%, respectively. The devices had a reverse leakage current of less than 20 mu A at -1 V indicating epitaxial...
The first successful room-temperature pulsed operation is reported of InGaAs strained layer multiquantum well (SL-MQW) injection lasers grown by MOVPE on InP substrates in the 1.8 mu m range. The threshold current density and the external differential quantum efficiency of the 10 mu m wide ridge waveguide lasers were 2.5 kA/cm/sup 2/ (cavity length=1 mm) and 5% (cavity length=400 mu m), respectively...
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