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In/sub 0.53/Ga/sub 0.47/As photoconductive detectors with low dark current and high speed are obtained by multiple energy H bombardment on p-type material. The dark current of the detectors is 10 mu A, the detectivity at 1.31 mu m is 1 A/W and the bandwidth is 1.8 GHz at a source-drain bias of 6 V for 5 mu m contact spacing.<<ETX>>
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