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Germanene, silicene, stanene, phosphorene and graphene are some of single atomic materials with novel properties. In this paper, we explored bilayer germanene-based Double Gate-Field Effect Transistor (DG-FET) with various strains and deformations using Density Functional Theory (DFT) and Green’s approach by first-principle calculations. The DG-FET of 1.6nm width, 6nm channel length (Lch) and HfO2...
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