The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This study presents ionized impurity impacts on silicon nanowire MOS transistors. We first calculate the current characteristics with a self-consistent three-dimensional (3D) Green's function approach and show the effects of both acceptor and donor impurities on the physical electron properties. In particular, we emphasize that the presence of a donor induces different transport phenomena according...
We have carried out 1-, 2-, and 3-D particle-mesh simulations of the electron gas under high electron densities, in which the long-range part of the Coulomb interaction plays a dominant role in determining the transport characteristics. The simulations turn out to be extremely sensitive with the parameters such as the time step and the size of particles. It is demonstrated for the first time that,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.