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The gate current present in double-gate fully depleted MOSFETs can significantly contribute to the channel current measured in these devices. For this reason, models must take account of this effect in order to represent correctly the behavior of the devices. In this paper, we report a complementation to the symmetric doped double gate model for MOSFETs, by including the presence of gate tunneling...
Design consideration of vertical MOSFET with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, Lg = 50 nm and analyzing its effect towards such small devices was successfully performed. The analysis continued with the comparative investigation of device performance with conventional planar...
In this work, the effects of aluminum implantation on thin La2O3 films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (~ 6% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction...
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