The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The aim of this paper is to identify the origin of a deep-level emission band with a peak at about 0.8 eV observed in photoluminescence from defective areas in multicrystalline Si crystals at room temperature. We compare the band with that in a plastically deformed float-zone and annealed Czochralski-grown Si crystals investigated in detail previously for microelectronic applications and point out...
ZnOis one of the most promising materials for optoelectronic devices for UV spectral range because of its wide and direct bandgap (3.37 eV) and high exciton binding energy (60 meV). The generation of multiphoton absorption (MPA) induced luminescence in ZnO by highly intense fs-lasers in near infrared offers one effective route for optical excitation. Therefore, much attention has been paid recently...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.