The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The dark current in CMOS Image Sensors induced by deliberate contamination with tungsten ion implantation is studied with the Dark Current Spectroscopy (DCS) technique. We obtain quantized dark current peaks associated to the donor level of W in silicon. Accounting for rigorously Schockley-Read-Hall formalism and Poisson distribution of metal atoms, the technique allows to check the generation rate...
Pixels in complementary metal–oxide–semiconductor (CMOS) image sensors (CISs) are being scaled downward toward 1.0 μm. In this context, improvements in crucial parameters such as dark current per pixel, which suffers from defects incorporated during processing, need to be achieved. Indeed, accidental metallic contamination is a critical issue that induces dark current and reduces yield. In this paper,...
The dark current of five periods Si 0.76 Ge 0.24 (60 9)/Si(300 9) quantum wells grown at 600, 680, 760 and 850 o C were measured at various temperatures and bias voltages. The dark current were determined by the thermalization of carriers at reverse and small forward bias, but controlled by the injection of carriers at large forward bias. At...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.