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We report the results of capacitance-voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements performed upon a Ga0.47In0.53As/InP quantum well structure. At room temperature, a conduction-band offset ΔEc=(200±10)meV and charge densities σI=±(3±1)*1011 times the electronic charge per cm2 have been measured from C-V experiments. At lower temperature (T≤150K) we have observed an important...
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