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A seven transistor (7T) static random-access memory (SRAM) cell with single-ended read and write operations is evaluated in this paper. The cell topology consists of a single bitline, a cross-coupled inverter pair with a transmission gate employed in the feedback path, and a bitline access transistor. Simulation results with 8 Kib SRAM arrays indicate up to 49.3% reduction in leakage currents, 42...
Various circuit topologies and FinFET technology options for implementing brute-force latches are explored in this paper. New low-power multi-threshold voltage (multi-Vth) FinFET brute force latches based on gate-drain/source overlap engineering and independent-gate bias are proposed. Different brute-force latches are characterized and compared for active mode power consumption, propagation delay,...
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