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The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage...
In order to better assist researchers to select the appropriate power device for medium voltage power electronics applications, this paper presents a comparative evaluation on three typical 6kV level Si and SiC power devices, including 6.5kV/25A Si IGBT from ABB, 6.5kV/15A normally off SiC JFET from USCi and a FREEDM System Center developed 6kV/26A SiC series-connected JFET. The 6.5kV Si IGBT and...
Switching devices based on SiC offer outstanding performance with respect to operating frequency, junction temperature and conduction losses and enable a significant improvement of the system performance. There, the cascode consisting of a MOSFET and a JFET additionally has the advantage of being a normally off device and offering a simple control via the gate of the MOSFET. Without dv/dt control,...
This paper focuses on the PSpice model of SiC-JFET element inside a SiCED cascode device. The device model parameters are extracted from the I–V and C-V characterization curves. In order to validate the model, an inductive test rig circuit is designed and tested. The switching loss is estimated both using oscilloscope and calorimeter. These results are found to be in good agreement with the simulated...
The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable...
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