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Ni-doped CdS thin films were prepared by 90keV Ni + implantation at room temperature. Ni-ion implantation induced modifications in structural, optical, and morphological properties are studied for a wide range of impurity concentrations (1.86–10.19at.%). Addition of Ni + ions does not lead to any structural phase transformation or formation of metallic clusters or secondary phase precipitates...
CdS semiconductor thin films have been deposited by chemical bath technique from an aqueous solution consisting of cadmium sulphate and thiourea. The deposition of CdS thin films depends on various parameters like pH, temperature, concentration of complexing agents and concentration of reactants (cadmium sulphate and thiourea). The ammonia evaporation from bath affects the pH of the solution and hence...
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