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The results obtained for CdS films chemically deposited from solutions containing different impurities known as donor type dopants for CdS (chlorine, iodine, boron and indium) are reported. CdS films were deposited onto glass and CuInSe 2 absorber substrates at 85 °C. The deposition baths were ammonia solutions containing 0.001 M Cd 2+ , 0.02 M ammonium compound and 0.002 M thiourea...
A doped CdTe/CdS photovoltaic structure has been grown onto ITO coated glass substrates by metal organic chemical vapour deposition (MOCVD). CdS is nucleated from dimethylcadmium and ditertiarybutylsulphide at 290 o C followed by CdTe growth from DMCd and diisopropyltelluride at 300-310 o C. The grain size of the CdTe is approximately the same as the underlying CdS layer and with a...
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