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In this paper, a distributed amplifier (DA) with a feed forward path is presented to reduce noise effects of input matching termination at the output. The proposed active termination (AT) technique also improves the amplifier gain without increasing its power consumption. To validate the introduced method, a four-stage wideband actively terminated DA (ATDA) is designed in a 0.18μm CMOS technology...
A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a...
A 40Watt linear power amplifier based on silicon LDMOSFETs is presented. It has ultra broadband characteristics from 2 to 512 MHz. The proposed amplifier has a push-pull structure using Guanella 1:1 and 1:4 transmission line transformers for its input and output baluns, respectively. A negative feedback network is also adopted for broadband operation with a flat gain response. To achieve high linearity,...
The source/load-pull design process of the input/output impedance matching network of a class E power amplifier is introduced in this paper. A design example of an LDMOS device MRF21010 at VHF band is given, and the results of the amplifier performance are simulated as a function of gate bias voltage, DC supply voltage, input power and frequency. The gain of 13.78 dB, the peak drain efficiency of...
This paper presents a two-stage wideband low noise amplifier (LNA) with active balun. The first stage adopts current bleeding and dc coupled common-drain feedback techniques to achieve high gain low noise figure and acceptable input matching over a wide frequency band. A conventional single-ended to differential convertor is used as a second stage. The proposed wideband LNA is designed for DVB-T application...
In this paper the design of a high gain low noise amplifier is presented. The LNA was successfully designed to operate over VHF and UHF ranges according to DVB-T specifications. The novelty of the design lies in the achievement of low noise figure across a wide bandwidth and high reverse isolation level. The latter was required in order to integrate the front-end block to a direct-conversion receiver...
This paper presents the design and simulation of a CMOS ultra-wideband low noise amplifier. The amplifier exhibits a form of thermal noise canceling with a shunt-feedback topology for operating in the band of 100-960 MHz. It was designed using the AMI C5F/N (0.5 mum) process. Thorough simulations including anticipated parasitics predict a noise figure ranging from 1.84-2.45 dB, a forward gain of 11...
A broadband low-noise amplifier (LNA) in a 0.13 mum CMOS is presented. The LNA consists of two cascaded gain stages. The first stage is a resistive feedback amplifier for an input impedance matching, and the second stage is an inductive peaking amplifier for gain compensation. Measurement results exhibit a voltage gain of 14 dB and a gain variation less than 1.7 dB over the frequency range of 0.1...
In this paper, a wide-band CMOS low-noise amplifier (LNA) is presented, in which the thermal noise of the input MOSFET is canceled exploiting a noise-canceling technique. The LNA is designed under input/output impedance matching condition. And its noise figure (NF) and linearity analysis are investigated particularly. The LNA chip is implemented in a 0.25-mum 1P5M RF CMOS process. Measurement results...
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