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A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a...
The use of microwave technology is increasing in cardiac applications for microwave assisted balloon angioplasty and microwave cardiac ablation. Traditional microwave energy sources used in these procedures have poor efficiency and are large in size requiring them to be located far from the patient, and require coaxial cables to deliver power resulting in loss and heat generation causing potential...
Power efficiency is a very important specification of power amplifiers for mobile and wireless communication systems. High power efficiency leads to long lasting connection time for mobile, nomadic and wireless devices using battery energy. Especially for public and homeland security applications, long connection time of wireless communication devices is desirable for emergency situations. This paper...
We have demonstrated a RLC matched GaN HEMT power amplifier with 12 dB gain, 0.05-2.0 GHz bandwidth, 8 W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic S08 package and contains a GaN on SiC device operating at 28 V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48 V operation and 15 W CW power...
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