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A 40Watt linear power amplifier based on silicon LDMOSFETs is presented. It has ultra broadband characteristics from 2 to 512 MHz. The proposed amplifier has a push-pull structure using Guanella 1:1 and 1:4 transmission line transformers for its input and output baluns, respectively. A negative feedback network is also adopted for broadband operation with a flat gain response. To achieve high linearity,...
An ultra-wideband amplifier scheme is realized with two cascaded stages that are equalized for high-bandwidth and low gain ripple. The amplifier is implemented in a 0.12 mum SiGe BiCMOS process and achieves a 3 dB bandwidth of 102 GHz. The gain is 10 dB with less than 1.5 dB gain-ripple and group-delay variation under +/- 6 ps over the entire 3 dB bandwidth. The chip occupies an area of 0.29 mm2 including...
A new Current Feedback Amplifier (CFA) suitable for VLSI applications is presented in two different designs to serve both low power (LBW design) and high bandwidth (HBW) applications. The new circuit is employing positive current conveyor followed by amplifier followed by buffer to achieve very high trans-impedance for this CFA circuit without needing to stack many transistors together and at the...
A broadband low-noise amplifier (LNA) in a 0.13 mum CMOS is presented. The LNA consists of two cascaded gain stages. The first stage is a resistive feedback amplifier for an input impedance matching, and the second stage is an inductive peaking amplifier for gain compensation. Measurement results exhibit a voltage gain of 14 dB and a gain variation less than 1.7 dB over the frequency range of 0.1...
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