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We have developed stable and high performance etch‐stopper (E/S) a‐IGZO TFT by using split oxide semiconductor layer. The a‐IGZO TFTs exhibit high mobility over 70 cm2/Vs and extremely stable under positive bias temperature stress. In this work we demonstrated a 4 inch transparent AMOLED using oxide TFT backplane with split active layer, where the gate driver is integrated.
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