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The impact of N/sub 2/O-nitridation of SiO/sub 2/ on gate oxide reliability against plasma damage is investigated here. It is observed that nitridation of thermal oxide significantly enhances the resistance of gate oxide against plasma induced charging. It is also observed that increasing N/sub 2/O nitridation enhances the immunity to plasma damage progressively. An optimum combination of N/sub 2/O...
A new kind of stress induced low level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the drain edge. Since the voltage dependence of this new kind of LLLC is steeper than that in the conventional FN stress-induced LLLC, each conduction mechanism may be different. This LLLC is reduced by both hot electron injection and UV irradiation...
The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.<<ETX>>
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