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A new SOI technology is introduced with enhanced device performance and small geometries. The low-impurity crystalline SOI film is produced by VPE local overgrowth (LOG) over an oxide, an important alternative to recrystallised silicon films for 3D-CMOS and SOI circuits. This technology was developed from epitaxial lateral overgrowth (ELO) to allow the use of the substrate as an interconnect layer...
A fundamental Bi-CMOS process based on SIMOX technology that can implement both CMOS/SIMOX and npn-bipolar/bulk transistors on the same chip is described. The CMOS and npn-bipolar transistors fabricated on separate substrates to verify the feasibility of this process, exhibited satisfactory operational characteristics.<<ETX>>
A major hurdle in VLSI/ULSI technology has been the inability to grow ultrathin oxides with low defect and interface trap densities and to generate a planar stress-free silicon/silicon-dioxide (Si/SiO/sub 2/) interface. The authors describe the fabrication of thin multilayered stacked SiO/sub 2/ structure with such qualities. A huge improvement in the quality of these stacked oxides has been achieved...
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