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The carrier concentrations and mobilities of impurity (Sb, In, Ga, Al, Ag, and Cu)-doped BaSi 2 films grown by molecular beam epitaxy on highly resistive n- or p-Si(111) substrates were measured at room temperature using the van der Pauw technique. Sb-, Ga- and Cu-doped BaSi 2 exhibited n-type conductivity, while In- Al- and Ag-doped BaSi 2 exhibited p-type conductivity. The...
To reduce surface recombination velocity (SRV) at the interface between amorphous Si (a-Si) and crystalline silicon (c-Si), we particularly investigated the treatment of c-Si surface prior to a-Si deposition using decomposed radicals of hydrogen (H 2 ) and phosphine (PH 3 ). The SRV can be reduced dramatically to 1.6cm/s only for n-type c-Si, while no such reduction is observed in...
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