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EUV Lithography is targeted for use for sub 40 nm critical level imaging, and the Alpha Demo Tools developed by ASML will be used to help manage the technological risks involved in readying this technology for commercialization. Our work on EUVL has included the design and implementation of key lithography system modules, creating those that are unique to EUVL and combining them with others that build...
Extreme ultraviolet lithography (EUVL) is one of the promising candidates for patterning process to achieve technology nodes of 50 nm or below. In order to fabricate low-defect EUVL mask blank, two kinds of cleaning technique have to be developed. One is for the substrate before Mo/Si multi-layer coating, another is for finished masks. Particles on the substrate induce phase defects by altering the...
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