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Impurity or elemental depth profiles are often influenced by the surface morphology changes during SIMS analyses. The surface morphology changes caused by ion bombardment depend on matrix material and have been reported on the materials such as Si, GaAs and GaN. In this study, we found the similar surface roughness in the case of SiC material under various Cs + bombardment conditions. The...
Titanium films of 90 nm thickness were deposited under UHV condition at different deposition rates, ranging from 0.3 to 10.2 Å s −1 , at room temperature on glass and Mo substrates at two incidence angles of 8.5° and 45°. The samples were analyzed using XRD and AFM techniques. The grain sizes were obtained from AFM images, while the crystallite sizes and preferred orientation of the films...
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