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The effect of a secondary copper selenide phase that appears during epitaxial growth of CuInSe 2 (CIS) films on (100) GaAs substrates was investigated. CIS films with different copper to indium molar ratios were deposited on (100) GaAs substrates at 360°C by migration-enhanced epitaxy. Films grown under In-rich conditions were polycrystalline, whereas films grown with a Cu-rich composition...
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