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We investigate the sources of uncertainty in the measurement of the reflection high-energy electron diffraction (RHEED) intensity oscillations during growth of AlAs, GaAs, and AlGaAs on GaAs substrates, and the resulting effects on predicted growth rates and composition. Sources of error examined include beam positioning, flux transients, substrate size, 'beat' phenomena in the RHEED oscillations,...
With the continued importance of 1.3μm wavelength fiber optic communication, devices based on GaAsN materials are becoming increasingly important components due to their inherent integration capability and their temperature stability. In this paper, we report on the characterization of a radio frequency (RF) plasma source using a dilute nitrogen (N) in argon gas mix, to understand the production of...
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