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Formation and transport of Ga-containing intermediates are essential for ammonothermal bulk growth of GaN. In this work, in situ X-ray transmission measurements are established as a tool for monitoring face-selective dissolution of GaN crystals as well as the Ga-concentration in the fluid. The accuracy of concentration determination by X-ray transmission measurements is evaluated and the detection...
The effect of gas flow multiplicity, i.e. the possibility of two very different flow regimes prevailing at random in a rotating disk metalorganic chemical vapor deposition (MOCVD) reactor, on the deposited GaN film is investigated. A transport model coupled with a system of chemical reactions in the gas phase and on the wafer where the film is formed, is implemented in the parameter regions where...
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