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An investigation of the melt growth of uniformly doped gallium-antimonide (GaSb) semiconductor crystals as well as other III-V alloy crystals with uniform composition are underway at the US Air Force Research Laboratory at Hanscom Air Force Base by the vertical gradient freeze (VGF) method utilizing a submerged heater. Stirring can be induced in the GaSb melt just above the crystal growth interface...
During the liquid-encapsulated Czochralski (LEC) process, a single compound semiconductor crystal such as indium phosphide or gallium antimonide is grown by the solidification of an initially molten semiconductor contained in a crucible. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper presents a model for the unsteady...
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