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Crystallization from a cobalt base Co65Si15B 14Fe4Ni2 amorphous magnetic alloy yielded an interesting highly modulated nanolamellar structure with lamellar spacing of about 5 nm. Coarsening of this structure was investigated using X-ray diffraction (XRD), transmission electron microscopy (TEM), convergent beam electron diffraction (CBED), and X-ray electron dispersive spectrum (XEDS) techniques and...
A 5 nm-thick SiO/sub 2/ gate was grown on an Si (p/sup +/)/Si/sub 0.8/Ge/sub 0.2/ modulation-doped heterostructure at 26 degrees C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field >12 MV/cm and fixed charge density approximately 3*10/sup 16/ cm/sup -2/. Leakage current as low as 1 mu A was obtained with the gate biased...
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