The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Single event effect susceptibility of industrial MCUs and key drive chips of several commercial transceivers are studied based on heavy ions and pulse laser methods. Based on the testing results, the performance of receive chips are better than transmit chips or transceiver chips, and the threshold values of transmit chips or transceiver chips are between 30 and 37MeV.cm2/mg. However, the MCUs are...
This work presents a SPICE-based automatic SET sensitivity evaluation of a 180nm CMOS full-custom Operational Amplifier. The set-up uses the well known double exponential current law to inject SET into every sensitive node in the circuit hierarchy. The pulse parameters are obtained according to a previously generated population of particles with randomly assigned energies and species, the node bias...
In this paper, the laser radiation model is built up with TCAD (Technology Computer Aided Design) tool. And a PN junction is chosen for simulating the Single Event Effects (SEEs) induced by the pulsed laser as well as heavy ions. The transient current responses related with SEEs are simulated, and also the distributions of the electrostatic potential and carrier generation inside the device are plotted...
An investigation is made of the trade-off between fluence measurement accuracy and ion changeover time. Allowing users to select fluence measurement accuracy based on the type of testing being performed and time available.
This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.
Electron Cyclotron Resonance (ECR) Ion Sources at Lawrence Berkeley National Laboratory's (LBNL) 88-Inch Cyclotron produce heavy ion cocktails to test the radiation hardness of spacecraft electronics. A 20 MeV/u cocktail is underway and the 10 MeV/u cocktail has been expanded to include gold.
This work investigates the feasibility of using high energy proton beams in lieu of, or to complement, broad energy spectrum neutron beams for accelerated testing of the cosmic component of terrestrial soft error rates (SER). Logic and memory devices manufactured in three recent technologies were tested at various proton facilities and their single event upset cross sections compared to soft error...
To avoid short channel effects in CMOS, the multigate structures are proposed. Gate all around (Nanowires) devices are the extreme version of the multigate devices. Recently nanotubes are introduced into the device family. Due to its reduced fabrication complexity the junctionless device is of interest to device community. In this paper, the junctionless silicon nanotube filed effect transistor (JLSiNT...
Single-event cross sections of four inverter chains, with uniform inverter spacing ranging from 120 nm to 4 μm, were experimentally measured and compared. These inverter chains were irradiated using a focused ion beam. Waveforms of responses were sensed using on-chip wide-bandwidth analog multiplexers. The outputs of the multiplexers drive the 50 Ω inputs of high speed real-time oscilloscopes used...
Single-event upset (SEU) responses of advanced dual- and triple-well planar technologies show significant differences in SEU cross-section for memory cells. The presence of the third well alters the charge-collection mechanism as well as increases the probability of charge sharing, affecting the SEU responses of memory cells. However, at the 16-nm FinFET technology node, heavy-ion experiments show...
AlGaN / GaN high electron mobility transistors (HEMTs) were exposed to 800MeV Bi ions with fluence up to 5×107 ions/cm2 at the Heavy Ion Research Facility in Lanzhou (HIRFL) Cyclotrons in Institute of Modern Physics, Chinese Academy of Sciences. Test results show that the drain current Id and the maximum transconductance gmax decreased by 6.8 % and 3.2% respectively, while the gate leakage current...
Laser-induced, time-resolved charge-collection measurements for In0.33Ga0.76Sb p-channel MOSFETS are reported for two different device structures; a buried-channel (quantum well) and surface-channel design. The charge-collection transient response is reported for different gate bias conditions. The two structures reveal dramatically different charge-collection transient response. The buried-channel...
The GR718B is a radiation tolerant 18-port, standalone, SpaceWire router developed by Cobham Gaisler AB for space applications. The validation of the most critical design blocks of the SpaceWire router with respect to Single Event Effects, when operated at high frequencies, is reported herein. In addition, the insensitivity of the design library used for the development of this device to Single Event...
Nowadays the RSA cryptographic algorithm is widely used to protect Big Data security and privacy. Fault injection has been proved effective against RSA implementations. Although heavy ions have been long known as a source to cause single event effect (SEE), there is few publication about how the RSA implementations could be compromised by ion strikes. This paper proposes an RSA implementation specifically...
We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs by means of stochastic steps corresponding to strike of a single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic...
The first ion-induced, time-resolved charge-collection measurements for p-channel AlGaSb/InGaSb field-effect transistors are reported. The transient response reveals two distinct decay regions; a fast initial decay (< 1 ns) followed by a slower decay (> 10 ns). The slow decay is associated with charge enhancement processes, which are explained by electron trapping and de-trapping via deep-level...
It was demonstrated that single-event burnout (SEBs) was observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiations. In addition to SEBs, permanent damage (increase of the drain leakage current) was also observed with higher LET ions similar to SiC Schottky Barrier diodes. For lower LET ions including protons, there were no leakage current increase just before SEBs were...
We study the design of different majority voters based on a commercial 65 nm CMOS technology, propose the test system and discuss the experimental results of heavy ion irradiation campaign and the proposed relative efficiency criterion for choosing the voter for a given TMR strategy.
Compendium of SEU, SEL, SET, SEB and SEGR comparative results under ion irradiation and focused laser beam are presented. The possible sources of discrepancies between ion and laser results and the ways of data correction are discussed.
The effects of temperature on the single-event upset (SEU) response of commercial and radiation-hardened SRAMs are investigated by experiment. The results showed that the SEU sensitivity relied on the temperature during the testing. However, it was also observed the amplitude of energy deposition of ions in sensitive volume of SRAM devices is able to affect the SEU sensitivity. When the deposited...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.