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The resistivity of a quasi-one-dimensional structure fabricated without masks by 20-keV Ga+ focused ion beam (FIB) on crystalline Si substrates was investigated for the first time, along with an analysis of properties of implanted p+ layers. The junction depth of the 7?? off-axis implanted layer after annealing, which was measured by stain method, is 410 nm. The distribution profile was investigated...
49BF2+ implanted wafers were annealed in the temperature range of 900degC and 1100degC using a single wafer rapid thermal furnace for 30 sec to 1800 sec under N2 ambient at atmospheric pressure. Sheet resistance and its uniformity were measured. Boron and fluorine depth profiles at different annealing temperatures and times were analyzed using secondary ion mass spectroscopy (SIMS). The minimum...
Nonmelt laser annealing (NLA) is used to form heavily-doped, ultra-shallow regions in boron implanted crystalline silicon. Results are compared to samples receiving a conventional 1050degC spike anneal. A high-dose non-amorphizing boron implant of 1015 ions/cm2 at 500 eV is used. The implant is laser annealed with between one and 1000 20 ns long pulses or a 1050degC spike anneal. NLA alone produces...
A model of charge transport in thermal SiO/sub 2/ with Si-implant-induced traps is proposed. In this model, traps are permitted to communicate with both the conduction band and the valence band of the Si substrate and poly-Si gate by means of direct tunneling. Electron injection in the SiO/sub 2/ conduction band, electron trapping by neutral and positively charged sites, and field depopulation of...
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