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The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters...
In this study, an extended base bipolar junction transistor (EBBJT) as an H+ ion sensitive device have been investigated. The SnO2/ITO glass, fabricated by sputtering SnO2 on the conductive ITO glass, is used as a pH-sensitive membrane for electrode, which is connected with a commercial bipolar junction transistor (BJT) device. The experimental data show that this structure has a linear pH response,...
Transport properties of single and multiwalled carbon nanotubes, with the tube axes aligned along the bias current direction, have been studied as a function of the temperature and applied current. The experimental data are consistent with a model of charge transport governed by tunnel between potential barriers created at the connection between the nanotubes or bundles surfaces and modulated by thermal...
A 210 W RF LDMOS power transistor optimized for pulsed applications has been used to characterize VSWR ruggedness as a function of bias and gain compression. The ruggedness test used is the 10:1 VSWR load mismatch. The transistor, operated in class AB power amplifier, can deliver 210 W of output power when biased at 32 V (P3dB) or 36 V (P1dB), having a minimum breakdown voltage of 85 V. In both conditions...
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