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Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it still remains an open point whether such materials can compete with noble metals. We employ a whole set of figures of merit to thoroughly assess the use of heavily-doped Ge on Si as a mid-infrared plasmonic material and benchmark it against standard noble metals such as Au. In doing this, we design and...
Field emitters are attractive for use in diagnostic gyrotrons destined for the DNP/NMR spectroscopy. They should provide durable work of the gyrotrons at currents more than 20–30 mA. The paper demonstrates prospects of the use of the developed by the authors multi-tip silicon emitters with metal — fullerene coatings for this application.
For the first time, an ultra-compact integrated isolator without use of permanent magnets is designed and fabricated by bonding Ce:YIG on a silicon microring. Record isolation of 32dB and low 2.3dB excess loss were achieved.
In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a...
This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever...
The Pd/SnO2/Al2O3/CuO/Ag/SnO2/Al2O3/CuO/p-Si/Al tandem p-i-n diodes with nanorod structure and addition of silver interconnecting metal layer were studied. The added interconnecting metal layer influences the material characteristics and leads the developed device to have a high relative sensitivity ratio of ∼2185% to 3000 ppm CO2 ambient gas. The response time of 20 sec is also fast. Thus, it has...
Three-dimensional (3D) integration is considered as a good alternative solution to overcome the limitations of silicon scaling. Through Silicon Via (TSV) and wafer bonding are two key elements for 3D integration. This paper focuses on the realization of high density direct bonding interconnection. Hybrid Cu-Cu and SiO2-SiO2 bonding was chosen for direct inter-wafer interconnection. A mask set of Test-Vehicle...
In this paper a simplification method of TSV interposer for thermal analysis was proposed. In order to analyze the accuracy of this simplification method, the actual model and corresponding equivalent model with 100 TSVs were established by using ANSYS Workbench software. In this study, the error of simplification method with various TSV diameters, TSV pitches have been determined. Conclusions are...
Through silicon via (TSV) technology offers a promising approach to achieve three dimensional integrated circuit integration. Via-last TSV process has the advantages of flexibility and lower cost. In this paper, we report our latest progress on wafer level packaging by via-last process. The 200mm device wafer was bonded with a carrier wafer. Then, the vertical TSV structure with aspect ratio of 3∶1...
We reported an investigation of Si-based p-i-n photodetectors with a Ge0.92Sn0.08 active layer grown by molecular beam epitaxy on n-type Si (100) substrate. The spectral response at zero bias shows the cutoff wavelength extends to 2300nm. This work represents a promising technology to develop Si-based photodiodes for short-wave infrared detection.
The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.
We have demonstrated a graphene photodetector with tunable photoresponse via electrostatic doping with split local back-gates formed by heavily doped silicon for the first time. A tunable photocurrent from 0 nA to 250 nA is obtained.
Commercially available micron-sized Ag flake particles and submicron-sized Ag particles were used to make Ag paste. The Ag paste was used to connect Si dies to Ni-Ag plated Cu substrates to achieve die-bonding joint for high temperature application. The contact between die and Ag paste was affected by the loading pressure, and was realized with only 0.2 MPa pressure. And the shear strength depended...
A TE-pass polarizer based on hybrid plasmonic Bragg grating for silicon-on-insulator platform is proposed. The structure greatly eases alignment tolerance compared with traditional plasmonic devices. An extinction ratio over 18 dB within bandwidth of 220 nm is achieved with compact length of 5.04 μm.
This paper investigates the use of asymmetric through-only de-embedding approach for on-chip stacked inductors. Silicon structures are fabricated on a standard 28nm CMOS process and characterized with a network analyzer on folded GSGSG pads to facilitate rapid, one-touch measurements. The proposed de-embedding approach is compared with the conventional de-embedding approach. Additionally, the proposed...
3D Integration is a promising technology to continue the trend of Moore's law. However, higher density from die stacking introduces thermal challenges that require more expensive packaging and cooling solutions. An alternative integration technology is interposer-based 2.5D design, which has fewer thermal issues but adds extra interposer cost. Designers must be aware of the system-level cost benefits...
The integration of a photonic information processing system onto a single chip requires great research effort toward engineering metamaterials for miniaturization of the optical devices and circuits. We discuss nanoscale engineered optical nonlinearities for modulation and wave mixing of optical fields, and metal-dielectric-semiconductor nanostructures and compositions to construct nanoemitters for...
GeSn alloy has recently received significant attention due to the fact that their direct-bandgap behavior can be predicted when the Sn content is larger than about 0.1. Moreover, the bandgap of these alloys can be adjusted in the infrared range. This has the potential to extend Si-based materials to infrared application. However, the epitaxial growth of GeSn on Si substrates has several challenges...
The electronic band structure, and in particular the band gap directness, of binary and ternary SiGeSn alloys are first reviewed, and different aspects of their optoelectronic and microelectronic applications discussed, and the computational analysis is then extended to the dilute carbon-containing alloys.
In 1991, Soref and Perry presented a concept paper on the properties of a hypothetical ternary Ge1−x−ySixSny alloy for silicon-compatible optoelectronic applications.1 The material was finally synthesized at Arizona State University in 2003,2 opening up a new field of research that is rapidly approaching its first one-thousand publications. A very recent review article by Wirths, Buca, and Mantl provides...
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