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In this study, design considerations of gate driver for silicon carbide (SiC) power devices is discussed. The work is focused in minimizing the common-mode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients. By reducing the common-mode interference with the control circuit, the signal integrity can be increased, spurious...
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
The present work proposes a solution for implementing an isolated gate driver for SiC power MOSFETs. The isolation capability, gate switching and power transfer to the isolated side features are accomplished by using a unique magnetic transformer. To avoid core saturation, the original PWM control signal is modulated with a high frequency square-waveform. The on and off times are modulated with two...
1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
Designing of gate drivers for high voltage SiC power devices in medium voltage applications is challenging due to high dv/dt and di/dt at the switching instants. During short circuit fault, the device current rises with high di/dt, and eventually the device fails within few of micro seconds if not protected. Short circuit protection of power devices is an essential feature to improve reliability of...
A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of...
Silicon carbide (SiC) MOSFETs have been widely studied in high frequency applications. The switching performance, however, is limited with the existence of the parasitic elements. One critical issue is the susceptibility of the gate-source voltage to the parasitic elements, rendering the possibility of spurious operation of the SiC MOSFETs. This paper conducts comprehensive investigations on the impact...
Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have become commercially available. The parasitic parameters, such as output capacitance, in each power device are not identical, because they depend on the device structure and material properties. Therefore, voltage sharing of turn-off operations under series-connection conditions of the power devices may be affected...
A health monitoring method using the saturationregion resistance is proposed in this paper to identify the level of aging associated with power semiconductor switches inside a Boost converter. Power MOSFETs are one of the most age-affected components in power electronic converters, and the on-resistance has been proved to be the most significant aging factor in power MOSFETs. However, the small value...
The reverse recovery characteristics of the body diodes of planar and double-trench SiC MOSFETs are experimentally analyzed in switching tests and compared. The body diode of the trench SiC MOSFET shows improved performance, so that using an anti-parallel SBD to suppress the reverse recovery behavior becomes unnecessary. Following the switching tests, the devices are operated in continuous mode in...
This work deals with the implementation and development of a PSpice based modeling platform for 10 kV/100 A SiC MOSFET power modules. The studied SiC MOSFET power module is composed of a total of 9 dies connected in parallel with 10.0 kV blocking voltage capability. The proposed model was implemented based on the already established McNutt Hefner model originally developed for discrete single-die...
This paper presents a high performance 12 kW motor drive system for an aerospace application. In order to achieve higher power density and reliability, the system uses a PMSM motor, SiC MOSFET inverter, high performance PWM control, and liquid cooling with phase change material. A power density of 33 KW/KG was achieved for the power inverter and control electronics excluding the cooling loop, and...
Reliability of power semiconductor switches is important when considering their vital role in power converters for aerospace, railways, hybrid electric vehicles, and power system applications. Due to technology advancements in material sciences, power MOSFETs manufactured with wide band gap materials such as silicon carbide (SiC), gallium nitride (GaN) have been proposed as an alternative to existing...
Silicon carbide (SiC) power semiconductor technology has successfully penetrated several silicon (Si) application markets and is gaining momentum due to higher voltage withstand capability, higher switching capabilities (i.e., 100s of kHz), and ability to withstand higher operating temperatures (i.e., more than 200°C). When properly applied, SiC MOSFETs can switch in nanoseconds making this a promising...
To solve the simulation convergence problem of Silicon Carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) models, this paper proposes a non-segmented model for SiC MOSFETs, which uses non-segmented, smooth continuous equations to describe the static and dynamic characteristics of SiC MOSFET. Further, the static characteristic of SiC MOSFET obtained by the non-segmented model is...
Multilevel converters are an emerging industrial technology and are the subject of a substantial amount of research. However, they are yet to find their way into many mainstream engineering applications. This paper presents a method of quantifying the benefits and disadvantages of multilevel converters of increasing order. The analysis focuses on the cascaded H-bride topology for grid-tie battery...
In this paper, a separation test method for eliminating the effects of different current densities on the bond wires is proposed. The separation test method makes it possible to study the effect of different current density on the fatigue damage of bond wires without changing the temperature swing and average temperature during the test. By analyzing the output characteristics of the linear region...
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