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We discuss the results of the design and examination of high-voltage superfast opening switches — the drift step recovery diodes (DSRD) based on silicon carbide. The fabricated diodes have p+-p-n+ structure with relatively thick low-doped base region, which allows switching voltage of 1.8 kV in less than 500 ps. With 4H-SiC DSRD operating as an opening switch in an ultrashort pulse generator circuit...
An improved 4H-SiC MOSFET has been presented with fewer static and dynamic losses. The novelty of the structure lies in a combination of a heavily doped n-type epitaxial layer on the drift layer (Current Spreading Layer, CSL) and a p-type implantation introduced in the middle of the JFET area (Central Implant Region, CIR). Heavily-doped CSL could significantly reduce the specific on-resistance by...
In order to precisely test the switching performance of high speed SiC MOSFET, this paper researches the test method. The simulation switching waveforms considering the parasitic inductors are compared to the switching waveforms without considering the parasitic inductors in this paper. The distinctions of comparative results are obvious and prove the effects of parasitic inductors on switching performance...
The power converter for more electric engine in aircraft requires high power density, which makes SiC extremely attractive for this application. In this work, a 50 kW SiC high power density converter with the topology of three-phase two-level voltage source inverter is developed. Meanwhile, an accurate mathematical model for the power loss and efficiency calculation is proposed, which is based on...
While silicon carbide (SiC) is now believed to be a potential replacement to leading horse material silicon (Si) on many power fronts, this paper addresses the merit of SiC material for a diverse range of power applications. Several commercial SiC power modules have been characterized and evaluated under various test conditions and hence strengthening the confidence level of their usage in the field...
This paper presents the results of a system study comparing a SiC MOSFET and a Si IGBT power module on a DC/DC power conversion system level. The target of this study is the evaluation of a reduced cooling effort as well as the reduction of inductor sizes by the use of high efficient SiC switches. Therefore a conversion performance target have been defined which have to be fulfilled by the SiC and...
This paper presents the impact of voltage fall time of SiC MOSFETs, applied in converters of aerospace DC fed AC drives, on a HF conducted EMI signals. Simple frequency domain behavioral model is proposed for the use. Simulation results and real system measurements are successfully compared. It was shown that appropriate tuning of MOSFET voltage fall time by means of gate driver design allows to selectively...
Taking into account typical power and temperature requirements of electric vehicle applications, silicon carbide based semiconductor devices seem to be the most promising candidates for future high power density traction inverter applications. Therefore, the design of a three-phase DC-AC inverter based on SiC MOSFETs under automotive constraints is discussed in this paper. In order to fully utilize...
Silicon carbide (SiC) devices are known for their fast switching transients. The combination of stray inductances in the load circuit and high di/dt values can lead to very high transient overvoltages. Therefore, the reduction of the stray inductance is one of the most important steps to utilise the full potential of SiC devices. However, in some applications the stray inductance cannot be reduced...
This work targets a novel self-powered Smart Circuit Breaker (SCB) for monitoring and controlling power in emerging small-scale AC nano-grids. The SCB concept is intended as a direct replacement of standard(120 Vac, 15 Arms) household circuit breakers, which imposes several challenging constraints. The SCB must therefore generate its own internal supply from the small AC voltage drop across the main...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
This paper addresses a study of output voltage of a switched capacitor step down converter for a high voltage application. The proposed design is 3:4 Series to parallel switched capacitor converter based on capacitors and switches only. The Slow Switching Limit Impedance was theoretically calculated and proven. The Slow Switching Limit Impedance has an inverse relation with switching frequency and...
The power delivered by a photovoltaic (PV) to the grid must be modified in multiple stages. The operation concept of the micro-inverter is to increase the low output voltage received from a PV panel. Wide bandgap (WBG) power devices such as SiC MOSFETs offer multiple advantages over traditional silicon power devices when are used in a solar energy field due to their high switching frequency, high...
This article presents the analysis of two topologies of power converters. Voltage Source Inverter (VSI) and Current Source Inverter (CSI) proposals for traction system applications, these topologies are implemented with silicon carbide devices. The use of SiC semiconductors allow working at high switching frequency (100KHz), increase the working temperature range and and decreasing power losses during...
This paper researches the performance benefits of replacing the Si IGBTs and diodes in a power module for automotive drives with either 650 V or 900 V SiC MOSFETs. Evaluating the mean conduction and switching losses in a load profile allows a comparison of both voltage classes in order to show which class offers the lower overall losses in the given application. Furthermore, the influence on the switching...
Three converter leg variants are analyzed for low power converter used for power electronic system for residential buildings. The two-level Si-IGBT and SiC-MOSFET converters are compared with Si-IGBT three-level T-type converter. Power losses generated in each of these converters over a predicted period of 20 years of operation are contrasted with the cost of converter options. The detailed selection...
In this paper, we present for the first time, the experimental results of a “Bimode Cross Switch (BXS)-Hybrid” built with 3.3kV Silicon Enhanced Trench Bi-mode IGBTs (Si-ET-BIGT) and Silicon Carbide MOSFETs (SiC-MOSFET). Also, we have compared the static (on-state) and dynamic (switching) characteristics of the 3.3kV BXS-Hybrid (1 × Si-ET-BIGT + 2 × SiC-MOSFET) with the full SiC-MOSFET (4 × SiC-MOSFET)...
The design to cost is a major challenge for the practices of power modules' development especially when faced with very polymorphic demands. The technologies used are not always appropriate in view of the required technical specifications, or can be too expensive, or too basic. Developing a power module consists in making the best technological choices to fit the mission profile of an application;...
In this work, the static and dynamic characteristics of a new double-trench SiC MOSFET are experimentally investigated and compared to two different available commercial SiC MOSFETs. The SiC devices are applied in a ZVZCS Phase-Shifted Full-Bridge converter which uses the parasitic leakage inductance of the transformer to achieve soft switching. A practical method to break down the converter losses...
Silicon carbide (SiC) MOSFET is capable of achieving better efficiency and better power density of power converters due to its low on-state resistance and lower switching losses compared to silicon (Si) Insulated Gate Bipolar Transistor. Operation of power converters at higher switching frequency using SiC devices allows reduction in filter size and hence improves the power to weight ratio of the...
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