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Increasing demand, regarding to advanced 3D packages and high performance applications, accelerates the development of 3D silicon integrated circuit, with the aim to miniaturize and reduce cost. The study of the reliability of the through silicon via and of most critical areas for the emergence of failure remains a major concern. This paper deals with the variation of stress and strain induced in...
A primary factor of anisotropic conductive film (ACF) package failure is delamination between the chip and the adhesive at the edge of the chip. This delamination is mainly affected by the thermal shear strain at the edge of the chip. This shear strain was measured on various electronic ACF package specimens by micro-Moire interferometry with a phase shifting method. In order to find the effect of...
A primary factor of ACF package failure is delamination between the chip and the adhesive at the edge of the chip. This delamination is mainly affected by the normal strain at the edge of the chip. This normal strain was measured on various electronic ACF package specimens by micro Moireacute interferometry with a phase shifting method. In order to find the effect of moisture, the reliability performance...
Low-k materials have been introduced in the backend interconnects since 90 nm node for advanced microelectronic products in order to reduce the RC delay. However, the fragile low-k layer is very sensitive to the thermal stress induced by the CTE (coefficient of thermal expansion) mismatch at metal/dielectric level as well as at die/package level. In the die/package interaction, the transition to lead-free...
The problem of a corner delamination in a fan-out chip scale package subjected to thermomechanical load is investigated. The fracture mechanics parameters, including the stress intensity factors, the strain energy release rate, and phase angles, for a quarter-circular corner delamination between silicon die and fan-out redistribution polyimide layer are obtained by using numerical finite element approach...
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