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Zirconium oxide based high-k dielectrics are studied for their possible future integration in Dynamic Random Access Memory (DRAM) Metal-Insulator-Metal (MIM) capacitors. To better understand their electrical properties a combined study is presented considering both their macroscopic and mesoscopic electrical behavior. Molecular beam deposition is used to deposit thin films of ZrO2 as well as (ZrO2...
Reliability characteristics of TaAlOx high-k dielectric MIM capacitors are reported. TaAlOx films have been deposited by RF co-sputtering of Ta2O5 and Al2O3 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAlOx-based MIM capacitors have been studied under constant current stressing...
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