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The majority of interconnects in an integrated circuit is composed of via-terminated segments that are connected to atomic sinks or reservoirs. In this paper, we investigate electromigration failure of Cu/low-k conductors with active (current carrying) sinks and reservoirs, as well as configurations where currents flow into or out of a common via. We show that when steady-state stress profiles are...
This paper presents a novel interconnect technology and packaging solution for silicon power devices, along with the virtual prototyping tool created to develop the concept and optimize it in terms of reliability. The technology is based on the use of bumps (i.e., conductive spheres or cylinders) to connect the surface of vertical power components and is characterized, in comparison with standard...
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