The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared into 65 nm low-power PD-SOI technology, taking into account all the SOI specific effect. Especially, it is shown that the leakage reduction techniques...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
A delay-locked loop of multi-band selector with wide-locking range and low power dissipation is presented. The architecture of the proposed delay-locked loop consists of phase frequency detector, charge pump, band selector, multi-control delay line, and start-up circuit. The multi-band selector is used to extend operation frequency of delay-locked loop by switching the multi-control delay line. The...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.