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In the previous report, we had reported the mechanism for the degradation of poly-Si TFTs under OFF region gate ac operation with the source and drain electrodes grounded. In this paper, the study is extended to the degradation of the devices under various ac and dc operation conditions. It is discovered that, though these stress conditions are different, the corresponding degradation behaviors in...
In this paper we will define reliability testing for organic thin film flexible photovoltaics. We will give examples of accelerated lifetime testing (ALT) protocols designed to quantify materials with respect to product specification and to meet customer needs. We will show the correlation between various standardized accelerated testing conditions and discuss progress in packaging. We find examples...
In this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure for GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer are used to realize high efficiency and...
3D contactless technology based on capacitive coupling represents a promising solution for high-speed and low power signaling in vertically integrated chips. AC coupled interconnects do not suffer from mechanical stress, and the parasitic load is much reduced when compared to standard DC solutions, such as wire bonding and micro bumps. Communication system based on wireless interconnection scheme...
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