The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The process of Si-Ge heterostructures formation in nanowhiskers (NWs) grown by the vapor-liquid-solid mechanism was investigated using Monte Carlo simulation. It was demonstrated that it is impossible to grow atomically abrupt axial heterojunctions via classical vapor-liquid-solid mechanism due to gradual change of catalyst drop composition when switching the fluxes. Dependences of GexSi1-x composition...
Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R2 for diffusion growth mode and radius independent for adsorption mode.
Monte-Carlo simulation of Si (111) surface interaction with dry oxygen near the critical conditions, separating Si etching and oxidation regions, was carried out. The reaction of formation and decomposition of silicon monoxide was included in the model. Just this reaction determines the rate of oxygen accumulation on Si (111) surface. Model critical conditions were determined from the Si etching to...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.