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The adsorption of water vapor on the Si(100) surface was found to proceed with formation of a charged form of an adsorption complex using the transverse acoustoelectric effect in the layered piezodielectric/air-gap/semiconductor structure. The sign of the localized surface charge is a function of the formation of silicon oxide and changes from positive to negative in going from the crystalline silicon(100) surface to the oxide-coated surface. Discrete states of the surface charge were observed....
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