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Current densities of 1.5ASD and additive concentrations of 15ml/L were used to electroplate the copper into TSV to fabricate the test samples. The samples were annealed at 425°C for 30 minutes in a vacuum furnace with the heating rate of 10°C /min. The annealed samples were thermal cycled with temperature range (25∼325°C), heating & cooling rate (10 °C/min), dwell time of 2 min at the peak and...
Synchrotron radiation real-time imaging technology was conducted to in situ investigate the thermomigration and solidification behavior of Cu/Sn-58Bi/Cu solder joint during reflow under temperature gradient. The high concentration of Bi in solder retarded the thermomigration of Cu atoms and the interfacial reaction of the solder joint. Both the growth of the interfacial intermetallic compounds (IMCs)...
We report thermoelectric characterization of Bi2-xSbxTe3 (x = 0.5, 1.0, and 1.5) synthesized by a solvothermal method using DMF as solvent. For Bi2Te3, the size of the edge and thickness of the hexagonal nanoplatelets are 200-250 nm and 20-25 nm, respectively. Bi2Te3 nanosheets appear to grow epitaxially from the surface of the Te tubes, which forms in the first step and acts as the template for the...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
The SrTiO3 and Y-doped SrTiO3 polycrystalline sintered bodies were synthesized by the polymerized complex (PC) process and the subsequent hot pressing at 1473 K for 1 h or at 1673 K for 2 h in Ar atmosphere. The X-ray diffraction patterns of the SrTiO3 and Sr0.9Y0.1TiO3 samples synthesized by the PC process and hot pressing at 1473 K showed that these samples were mostly composed of the SrTiO3 single...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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