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A thorough approach to the location and origin of traps generated in InGaP/GaAs heterojunction bipolar transistors (HBT) by low frequency noise characterization and reliable physics-based simulation is discussed. Physics-based simulation together with the low frequency equivalent short-circuit current noise sources (Sib, Sic) experimental results reveal an electron trap located at the 5-InGaP/GaAs...
This paper investigates the impact of collector-base space charge region (CB SCR) transport on RF noise in bipolar transistor using compact modeling. A model applicable to any compact models is derived and implemented using Verilog-A. Comparison with noise measurement on a SiGe HBT technology shows that overall the noise modeling results are much improved. The imaginary part of optimum generator admittance...
In this paper, for the first time, silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This tuner is directly integrated in on-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60...
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