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Discrete package Insulated Gate Bipolar Transistor (IGBT) devices are a popular choice for low-medium power converters. Although IGBT power modules have been extensively studied in literature, there exists a major gap for reliability study particularly for discrete devices. Current failure diagnostic tools are not mature enough for failure diagnosis and prognosis in real-time operation based on system...
Identification of power device failure precursors is essential for condition monitoring, fault severity assessment and lifetime estimation. These tools constitute the fundamental elements to achieve highly reliable power converters with self-diagnosis capability, which can report incipient faults at very early stage. In this paper, several discrete IGBTs are thermally aged on a custom-built modular...
Insulated gate bipolar transistor (IGBT) failures are a major issue in modern power electronics applications. Two most dominated failure mechanisms of IGBTs are solder fatigue and bond wire wear-out. This paper proposes a new method to online monitor an IGBT's health condition by using the instantaneous junction temperature variation between present and the first operating cycles of the IGBT with...
This paper describes a part of a larger supervision system able to monitor the on-state voltage VCE and the junction temperature TJ of IGBT in operation. That system is associated to an ageing test bench stressing IGBT modules by power cycling. All along the ageing test, it is necessary to supervise VCE, always measured in the same conditions of junction temperature and collector current, in order...
This paper aims to find a new technique to predict the state of health of power converters by characterizing the most vulnerable components in the converter without affecting the normal circuit operation. Spread spectrum time domain reflectometry (SSTDR) can detect most of the aged components inside the converter while the converter is operational. Semiconductor switches and electrolytic capacitors...
A novel technique to evaluate changes over time of trigger circuit parameters, especially the power transistors of standard power electronic converters is proposed. This technique takes advantage of existing instrumentation and provides a key novel feature to assess the aging status of power electronic circuits and electric machines as a result of transistor degradation. We propose the use of a low-cost...
To advance the field of electronics prognostics, the study of transistor fault modes and their precursors is essential. This paper reports on a platform for the aging, characterization, and scenario simulation of gate controlled power transistors. The platform supports thermal cycling, dielectric over-voltage, acute/chronic thermal stress, current overstress and application specific scenario simulation...
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