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Temperature dependent scattering parameter data was collected on a 30 × 30 µm2 voltage activated barium strontium titanate solidly mounted resonator. The frequency variation over the temperature range of −40°C to 120°C normalized to room temperature was as low as 0.41% and as high as 0.84%. The resonant frequency measurements also show a step at −10°C which is believed to be a structural phase transition...
We propose a new way to temperature compensate solidly mounted bulk acoustic wave resonators (SMRs). With the proposed process high Q, high electromechanical coupling coefficient, fully temperature compensated resonators have been successfully fabricated with TCF less than 1 ppm/??C and total thermal drift of less than 35 ppm across the temperature range from 0-100??C.
This paper presents a review of micro-electromechanical devices for frequency references and RF spectral processing. The application of high-Q pure silicon and AlN-on-silicon bulk acoustic wave resonators in low phase-noise reference oscillators is discussed and compensation challenges are described. Low-loss piezo-acoustic filters and high-Q tunable and switchable silver passives are presented for...
This paper presents a full characterization of the thermal parameters to improve the thermal Mason's model for BAW resonator design, in particular, the temperature dependence of the velocity TC(V), the elasticity TC(C33D), the piezoelectric coefficient TC(e33) and the permittivity TC(??33) for the AlN film. These parameters associated with the piezoelectric theory assesses the TC(e33) coefficient...
This work deals with BAW SMR reliability at high power levels. Experimental methods easy to set up in common RF laboratories are presented and validated. Experimental results concerning frequency shifts versus the dissipated power and the harmonics generation are reported. The main origins of these effects are discussed physically and conclusions in light of the obtained results about the characterization...
In this paper, we propose a novel approach for HBAR devices using the Smart Cuttrade technology to obtain thin homogeneous X-cut single crystal films of LiNbO3. Sub-micron layers were successfully transferred onto LiNbO3 handle wafers. RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut...
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