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This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of gmb is observed across process technology and it is shown that the gmb/gm ratio falls from 0.38 to 0.12 between IBM's 0.25 ??m and 65 nm bulk CMOS processes via simulation. Delta and step doping are then proposed to enable the scaling of bulk-driven MOSFETs down to a channel length of 80...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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