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This session of exclusively invited papers covers a selection of wafer-level technology developments key to extending nanoscale CMOS. Specific topics are progress and outlook of lithography, copper interconnects, SOI-CMOS device architectures, and high-mobility channel CMOS technologies.
The following topics are dealt with: NAND flash memory; strain technology; nonvolatile memory; integrated circuit interconnection; CMOS; next generation lithography; and high mobility channel.
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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