The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
P-type Schottky barrier nanowire metal-oxide-semiconductor field-effect transistors are simulated with a rigorous quantum mechanical approach. The multi-band k·p method is employed for the description of hole transport in the silicon region while the parabolic effective mass Hamiltonian is used for the metallic source and drain. A characteristic transition from entirely thermionic transport to entirely...
The blockage of hole transport due to excess holes In SiGe dots was observed in the MOS tunneling diodes for the first time. The five layers of self-assembled SiGe dots are separated by 74-nm Si spacers and capped with a 130-nm Si. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at positive gate bias and is seven orders of magnitude higher than the Al...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.