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As the low power technology is scaled to below 32 nm node, a number of challenges are emerging, that of scaling L (to fit at pitch) and the device leakage (GIDL and junction) . A fully depleted device can enable both L scaling and at the same time keep the GIDL much below the bulk CMOS. Significant progress has been made on FD on thin SOI. They include demonstration of devices with the right threshold...
Sources responsible for local and inter-die threshold voltage (Vt) variability in undoped ultra-thin FDSOI MOSFETs with a high-k/metal gate stack are experimentally discriminated for the first time. Charges in the gate dielectric and/or TiN gate workfunction fluctuations are determined as major contributors to the local Vt variability and it is found that SOI thickness (TSi) variations have a negligible...
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