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We demonstrate a substrate-removed silicon Mach-Zehnder modulator with the 3-dB electro-optical bandwith beyond 50 GHz. Based on this modulator, 80 Gb/s on-off-keying and 50 Gbaud PAM-4 optical modulations are experimentally achieved without electrical pre-equlization.
Wide bandwidth, ultra-low voltage modulators based on substrate removal technology and loaded line traveling wave electrodes are presented. Drive voltage product is 0.06 V-cm and 2 mm long devices have electrical-to-electrical bandwidths exceeding 80 GHz.
In this work, lateral-extensional thin-film piezoelectric- on-diamond (TPoD) filters with very low insertion loss (IL) values (≪4 dB) are reported. Two different lateral-extensional modes of a resonant structure are coupled together to realize a two-pole filter. The filters of this work exhibit low IL values, with fractional bandwidth between 0.08% and 0.2%, and have a very small footprint. This paper...
Traveling wave electrodes suitable for wide bandwidth substrate removed electro-optic modulators containing buried electrodes are reported. Experimental results indicate modulator bandwidths in excess of 35 GHz along with sub volt drive voltage.
We demonstrated 100-Gb/s DBPSK signal generation by using a thin-LiNbO3-substrate modulator. The low Vΰ and the reduction in the propagation loss of electrodes helps realize high-speed PSK operation.
Longitudinal leaky surface acoustic wave (LLSAW) is attracting considerable attention for its high velocity and reasonable coupling coefficient. The intrinsic temperature coefficient of frequency (TCF) for these waves for different longitudinal cuts with metal gratings is in the range of -110 to -90 ppm/degC. However, for certain filter applications the TCF of the LLSAW waves must be quite low in...
Advances in micromachining technology can facilitate the integration of SAW (Surface Acoustic Wave) devices and CMOS circuitry on IC scale substrate for Monolithic fabrication. The optimal design and performance of these filters can be reached by using new Smart materials. The key component in the structure of the SAW device is the piezoelectric materials used which depends mainly on some important...
We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium- metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (~300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400degC/600degC combined with a thin (~10 nm) low-temperature Si/Si0.8 Ge0.2...
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