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A high efficient GaN switch-mode amplifier for Gbit data rates is presented. The design uses GaN HEMTs with a gate length of 250 nm. It consists of a dual-gate transistor configuration in the output stage. This allows an increase of supply voltage in order to increase the output power. If an increase of power is not required, device size can be reduced which comes along with a better RF-performance...
In many applications single-phase PFC rectifiers should meet the demand for a high efficiency and a high power density at the same time. Depending on the weighting of these two design criteria, different topologies could be advantageous. As has been shown, with bridgeless PFC rectifiers an ultra high efficiency of 99.3% or a high power density of 5.6kW/dm3 could be realised. However, due to the hard...
In high-power density power converter designs, power losses of power devices are essential design parameters. Silicon-carbide (SiC) power devices are expected as next generation power devices due to their superior performances compared to conventional silicon (Si) power devices. The power loss performances of a SiC power module using SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) and Junction...
This paper reports on a novel voltage-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT MMICs. It achieves a peak output power of 3.4 W for a single tone at 400 MHz, encoded in standard band-pass delta-sigma modulation with 1.6 Gbps sampling frequency. The corresponding efficiency is 38%, peaking at 52% for 0.5 W output power. In order to demonstrate the influence of coding efficiency,...
We report the DC and switching performance of a normally-off 5 A/1100 V GaN-on-Si device. The device had a breakdown field of 95 V/??m and a VB2/Ron,sp of 272 MW/cm2. A 360 V/180 W boost converter was operated at 200 KHz, with an efficiency >92%. Respectively, these values are the highest for a normally-off GaN-on-Si device.
This paper describes a method for designing single-ended high-efficiency switched-mode class-E UHF power amplifiers. The design procedure consists of a modified load pull transistor characterization from which a power/efficiency metric is calculated. Results for four prototypes using different device technologies are presented in detail. Amplifiers with Si-LDMOS, SiC-MESFET, GaN-HEMT on a Si substrate,...
In this paper, the performance of high output power density 400/400 V isolated dc/dc converter for power supply in data center is investigated. The isolated dc/dc converter uses the hybrid pair of SJ-MOSFET and SiC-SBD power devices. A high accuracy of dc/dc converter analysis is carried out by considering the intrinsic and extrinsic loss parameter of power devices and circuit board. Based on this...
A novel reconfigurable power amplifier structure for multi-band and multi-mode applications is presented. Included in the design are a reconfigurable output matching network and a reconfigurable die. To demonstrate the feasibility of the concept, a 900 MHz/1.6 GHz reconfigurable power amplifier with 33.8 dBm/29.4 dBm output power has been designed as a multi-chip module to validate the multi-band...
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