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A 1.8 V capacitor-free linear regulator with fast transient response based on a new topology with a fast and slow regulation loop is presented. The design has been laid out and simulated in a 0.18 µm CMOS process. The design has a low component count and is tailored for system-on-chip integration. A current step load from 0–50 mA with a rise time of 1 µs results in an undershoot in the output voltage...
As the technology improved to support very large chip sizes, system designers were faced with power consumption problem and leakage current problem. CMOS technology has increased in level of importance to the point where it now clearly holds center stage as the dominant VLSI technology In this research paper shows the implementation of a DRAM 4×4 (dynamic random access memory) with self controllable...
This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
Class D amplifiers are becoming the most feasible solution for embedded audio application. However, distortions due to the non-linear nature of switching stage are the main drawback for this amplifier topology. This paper discusses the design and implementation of high fidelity audio class D using sliding mode control scheme. This design method proves to be a cost effective solution for industrial...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
A new low-jitter polyphase-filter-based frequency multiplier incorporating a phase error calibration circuit to reduce the phase errors is presented. Designing with a multiplication ratio of eight, it has been fabricated in a 0.13-mum CMOS process. For input frequency of 25 MHz, the measured jitter is 2.46 ps (rms) and plusmn9.33 ps (pk-pk) at 200-MHz output frequency, while achievable maximum static...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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